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Proceedings Paper

Monolithic integration of metal-ferroelectric-semiconductor heterostructure using atomic layer deposition
Author(s): Edward L. Lin; Shen Hu; John G. Ekerdt
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Paper Abstract

Integration of perovskite oxides with silicon and germanium can enable the realization of novel electronics device designs and the improvement of device performance. In particular, the wide variety of perovskite oxides and their ability to grow epitaxially on silicon and germanium allows the design of monolithically integrated semiconductor devices. The fabrication of monolithically integrated metal-ferroelectric-semiconductor structures is reported. Out-of-plane orientation of BaTiO3 ferroelectric film is demonstrated, and process considerations to ensure oxide electrode conductivity are discussed. The structures reported here demonstrate the feasibility of fabricating ferroelectric field effect devices that are monolithically integrated into silicon and/or germanium platforms.

Paper Details

Date Published: 24 February 2017
PDF: 10 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 1010519 (24 February 2017); doi: 10.1117/12.2254196
Show Author Affiliations
Edward L. Lin, The Univ. of Texas at Austin (United States)
Shen Hu, The Univ. of Texas at Austin (United States)
John G. Ekerdt, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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