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Proceedings Paper

Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation)
Author(s): Patrick Quach; Arnaud Jollivet; Nathalie Isac; Adel Bousseksou; Frédéric Ariel; Maria Tchernycheva; François H. Julien; Miguel Montes Bajo; Julen Tamayo-Arriola; Adrián Hierro; Nolwenn Le Biavan; Maxime Hugues; Jean-Michel Chauveau

Paper Abstract

Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union’s Horizon 2020 research and innovation programme under grant agreement #665107.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051E (19 April 2017); doi: 10.1117/12.2253868
Show Author Affiliations
Patrick Quach, Univ. Paris-Sud 11 (France)
Arnaud Jollivet, Univ. Paris-Sud 11 (France)
Nathalie Isac, Univ. Paris-Sud 11 (France)
Adel Bousseksou, Univ. Paris-Sud 11 (France)
Frédéric Ariel, Univ. Paris-Sud 11 (France)
Maria Tchernycheva, Univ. Paris-Sud 11 (France)
François H. Julien, Univ. Paris-Sud 11 (France)
Miguel Montes Bajo, Univ. Politécnica de Madrid (Spain)
Julen Tamayo-Arriola, Univ. Politécnica de Madrid (Spain)
Adrián Hierro, Univ. Politécnica de Madrid (Spain)
Nolwenn Le Biavan, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Maxime Hugues, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Jean-Michel Chauveau, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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