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Proceedings Paper

Biosensing characteristics of InAs nanowire transistors grown by MOCVD
Author(s): Doo Gun Kim; Jeongwoo Hwang; Seon Hoon Kim; Hyun Chul Ki; Tae Un Kim; Jae Cheol Shin; Young Wan Choi
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Paper Abstract

We demonstrated the ion-sensitive field-effect transistors (IS-FETs) based on nanowires (NWs) with different diameters and doping concentrations to obtain the high sensitivity and various applications. The growth of the catalyst-free InAs NWs was carried out using a horizontal reactor MOCVD system (AIXTRON Inc.). A p-type Si (111) wafer (ρ = 1 -10 Ω-cm) was prepared for the NW growth. Here, NWs with diameters of around 50 ~ 150 nm were grown and the doping concentration also was changed around x±1016~18 /cm2. IS-FETs with the grown InAs NWs were fabricated using the photolithography and the lift-off process. The gas sensing characteristics have been investigated through studying the gate response of the NW conductance in different ambient conditions.

Paper Details

Date Published: 23 February 2017
PDF: 7 pages
Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 1011416 (23 February 2017); doi: 10.1117/12.2253637
Show Author Affiliations
Doo Gun Kim, Korea Photonics Technology Institute (Korea, Republic of)
Jeongwoo Hwang, Korea Photonics Technology Institute (Korea, Republic of)
Seon Hoon Kim, Korea Photonics Technology Institute (Korea, Republic of)
Hyun Chul Ki, Korea Photonics Technology Institute (Korea, Republic of)
Tae Un Kim, Korea Photonics Technology Institute (Korea, Republic of)
Jae Cheol Shin, Yeungnam Univ. (Korea, Republic of)
Young Wan Choi, Chung-Ang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10114:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV
Diana L. Huffaker; Holger Eisele, Editor(s)

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