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Proceedings Paper

Temperature dependence of quantum-wire intermediate-band solar cells
Author(s): Mirsaeid Sarollahi; Vasyl P. Kunets; Yuriy I. Mazur; Mansour Mortazavi; Gregory J. Salamo; Morgan Ware
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Paper Abstract

This work investigates the performance of an intermediate band solar cell (IBSC) structure based on InGaAs/GaAs lateral quantum wires under elevated temperature. Un-optimized structures using the same quantum wire based IB material have demonstrated an increase in solar conversion efficiency in comparison with reference GaAs P-I-N diode devices. In order to further understand the physics behind this increase, an optimized structure was developed and characterized. The External Quantum Efficiencies (EQE) of doped and Un-doped samples have been measured using these optimized designs. We present here the results of varying both applied bias and temperature on the EQE of these IBSC devices to highlight the advantages of such a structure.

Paper Details

Date Published: 23 February 2017
PDF: 10 pages
Proc. SPIE 10099, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI, 100991F (23 February 2017); doi: 10.1117/12.2253546
Show Author Affiliations
Mirsaeid Sarollahi, Univ. of Arkansas (United States)
Vasyl P. Kunets, Univ. of Arkansas (United States)
Yuriy I. Mazur, Univ. of Arkansas (United States)
Mansour Mortazavi, Univ. of Arkansas at Pine Bluff (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)
Morgan Ware, Univ. of Arkansas (United States)


Published in SPIE Proceedings Vol. 10099:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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