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Proceedings Paper

Progress on high-power 808nm VCSELs and applications
Author(s): Delai Zhou; Jean-Francois Seurin; Guoyang Xu; Robert Van Leeuwen; Alexander Miglo; Qing Wang; Alexey Kovsh; Chuni Ghosh
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Paper Abstract

High power 808nm semiconductor lasers are widely used for pumping neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal to produce high-brightness lasing at 1064nm. In addition, there are growing interest to use such high power 808nm lasers in the field of automotive infra-red (IR) illumination and medical aesthetic treatment. Vertical-cavity surface-emitting lasers (VCSELs) have emerged as a promising candidate and attracted increased interests for those applications, due to their combined advantages of high efficiency, low diverging circular beam, narrow emission spectrum with reduced temperature sensitivity, low-cost manufacturability, simpler coupling optics, and increased reliability, especially at high temperatures. They can emit very high power with very high power density as they can be conveniently configured into large two-dimensional arrays and modules of arrays. We report recent development on such high-power, high-efficiency 808nm VCSELs with industrial leading ~55% power conversion efficiency (PCE). Top emitting VCSELs were grown by MOCVD and processed into single devices and 2D arrays using selective wet oxidation process and substrate removal technique for efficient current confinement and heat removal. Peak PCE of 51% and peak power of 800W were achieved from 5x5mm array, corresponding to peak power density of ~4kW/cm2. Pumped with new generation of 2.3kW VCSEL module, Q-switched laser pulse energy at 1064nm reached 46.9mJ, more than doubled from previously reported results.

Paper Details

Date Published: 25 February 2017
PDF: 9 pages
Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 1012206 (25 February 2017); doi: 10.1117/12.2253228
Show Author Affiliations
Delai Zhou, Princeton Optronics, Inc. (United States)
Jean-Francois Seurin, Princeton Optronics, Inc. (United States)
Guoyang Xu, Princeton Optronics, Inc. (United States)
Robert Van Leeuwen, Princeton Optronics, Inc. (United States)
Alexander Miglo, Princeton Optronics, Inc. (United States)
Qing Wang, Princeton Optronics, Inc. (United States)
Alexey Kovsh, Princeton Optronics, Inc. (United States)
Chuni Ghosh, Princeton Optronics, Inc. (United States)


Published in SPIE Proceedings Vol. 10122:
Vertical-Cavity Surface-Emitting Lasers XXI
Kent D. Choquette; Chun Lei, Editor(s)

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