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Proceedings Paper

Device design for global shutter operation in a 1.1-μm pixel image sensor and its application to near infrared sensing
Author(s): Zach M. Beiley; Robin Cheung; Erin F. Hanelt; Emanuele Mandelli; Jet Meitzner; Jae Park; Andras Pattantyus-Abraham; Edward H. Sargent
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Paper Abstract

Global shutter is a feature of some CMOS image sensors that allows capture of an entire image at a single point in time. We discuss how the device architecture of InVisage’s QuantumFilm enables global shutter operation by controlling the bias on the device stack without an additional transistor, giving high shutter efficiency in a 1.1 μm pixel CMOS image sensor. We use drift-diffusion device simulations to inform our design and reveal device and material properties that are key for carrier selectivity. Based on our device model, we fabricated global-shutter-enabled QuantumFilm devices for near infrared sensing applications and present a characterization of our devices.

Paper Details

Date Published: 22 February 2017
PDF: 5 pages
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100981L (22 February 2017); doi: 10.1117/12.2253219
Show Author Affiliations
Zach M. Beiley, InVisage Technologies, Inc. (United States)
Robin Cheung, InVisage Technologies, Inc. (United States)
Erin F. Hanelt, InVisage Technologies, Inc. (United States)
Emanuele Mandelli, InVisage Technologies, Inc. (United States)
Jet Meitzner, InVisage Technologies, Inc. (United States)
Jae Park, InVisage Technologies, Inc. (United States)
Andras Pattantyus-Abraham, InVisage Technologies, Inc. (United States)
Edward H. Sargent, InVisage Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 10098:
Physics and Simulation of Optoelectronic Devices XXV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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