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Proceedings Paper

Tunnel junction 850-nm VCSEL for aperture uniformity and reliability
Author(s): P. S. Wong; J. Yan; T. C. Wu; W. Kyi; J. Pao; M. Riaziat
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Paper Abstract

We are reporting the first successful fabrication of 850-nm buried tunnel junction (BTJ) VCSELs. Multiple parameters were considered for the design. First, n-type dopants other than silicon had to be considered for an abrupt junction. Second, proper layer thickness had to be chosen. Finally, compatibility with regrowth and processing had to be ensured. In this paper the successful fabrication and performance of 850-nm BTJ VCSELs with tunnel junctions comprised of GaAs and AlGaAs materials is demonstrated. Key achieved parameters include a significant improvement in the slope efficiency from approximately 0.45 W/A in an oxide-aperture VCSEL to over 0.6 W/A.

Paper Details

Date Published: 25 February 2017
PDF: 5 pages
Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220B (25 February 2017); doi: 10.1117/12.2253053
Show Author Affiliations
P. S. Wong, OEpic Semiconductors, Inc. (United States)
J. Yan, OEpic Semiconductors, Inc. (United States)
T. C. Wu, OEpic Semiconductors, Inc. (United States)
W. Kyi, OEpic Semiconductors, Inc. (United States)
J. Pao, OEpic Semiconductors, Inc. (United States)
M. Riaziat, OEpic Semiconductors, Inc. (United States)


Published in SPIE Proceedings Vol. 10122:
Vertical-Cavity Surface-Emitting Lasers XXI
Kent D. Choquette; Chun Lei, Editor(s)

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