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Proceedings Paper

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon
Author(s): P. Bhattacharya; A. Hazari; S. Jahangir
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Paper Abstract

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Paper Details

Date Published: 16 February 2017
PDF: 8 pages
Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240H (16 February 2017); doi: 10.1117/12.2252981
Show Author Affiliations
P. Bhattacharya, Univ. of Michigan (United States)
A. Hazari, Univ. of Michigan (United States)
S. Jahangir, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 10124:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI
Jong Kyu Kim; Michael R. Krames; Li-Wei Tu; Martin Strassburg, Editor(s)

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