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Proceedings Paper

Efforts to control the EUV reflectance degradation of sputtered SiC films
Author(s): Dan Schwarcz; Ritva A. M. Keski-Kuha
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Paper Abstract

There is a need for thin optical coatings that can be produced at low temperatures and have a high reflectance in the extreme ultraviolet (EUV). Currently, the best such material is silicon carbide (SiC) sputtered onto optical surfaces from targets of beta-SiC which were produced by chemical vapor deposition (CVD). The EUV reflectance of these films, however, is not as high as that of polished CVD SiC, and in addition it degrades with time. In this study the nonreversible reflectance degradation is quantified, and efforts to ameliorate it via ion-assisted deposition (IAD) and other techniques are detailed.

Paper Details

Date Published: 23 October 1995
PDF: 6 pages
Proc. SPIE 2543, Silicon Carbide Materials for Optics and Precision Structures, (23 October 1995); doi: 10.1117/12.225298
Show Author Affiliations
Dan Schwarcz, NASA Goddard Space Flight Ctr. (United States)
Ritva A. M. Keski-Kuha, NASA Goddard Space Flight Ctr. (United States)


Published in SPIE Proceedings Vol. 2543:
Silicon Carbide Materials for Optics and Precision Structures
Mark A. Ealey, Editor(s)

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