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Proceedings Paper

Facet temperature measurement of GaN-based laser diodes using thermoreflectance spectroscopy (Conference Presentation)
Author(s): Dorota Pierscinska; Kamil Pierscinski; Lucja Marona; Przemyslaw Wisniewski; Piotr Perlin; Maciej Bugajski

Paper Abstract

Investigation of temperature distribution on the facet of the device, with high spatial and temperature resolution, is crucial to gain insight into thermally activated degradation modes in GaN-based lasers. This work undertakes the problem of temperature distribution measurement on the facet of the nitride lasers. Thermal investigation of the nitride devices is mainly based on thermal imaging. However, this approach is characterized by inherently low spatial resolution, as well as the fact, that the registered image, is averaged over the volume of the device, limiting the ability to observe the enhanced thermal processes occurring at the vicinity of the surface (front facet). Thermoreflectance spectroscopy, provides the possibility of registering of high spatial and temperature resolution images of the surface of the device operating in quasi-CW or pulsed mode. In this work we present development of the unique experimental setup and procedure, devoted to the thermal characterization of the nitride lasers. Thermal characterization of series of devices was performed, providing a mode for comparing different operating conditions, geometries and device designs. Measurement of the temperature profile and high-resolution temperature distribution maps on the front facet of AlGaN/GaN via thermoreflectance spectroscopy will be demonstrated. The results indicate the direction to take in order to improve the laser reliability and performance. Additionally, the degradation mechanisms induced by temperature increase are discussed.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040B (19 April 2017); doi: 10.1117/12.2252940
Show Author Affiliations
Dorota Pierscinska, Institute of Electron Technology (Poland)
Kamil Pierscinski, Institute of Electron Technology (Poland)
Lucja Marona, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Przemyslaw Wisniewski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Maciej Bugajski, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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