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Proceedings Paper

Material properties assessment for large-diameter single-crystal silicon
Author(s): William A. Goodman; Mark S. Goorsky
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Paper Abstract

An experimental database of the optical, electrical, physical, and structural properties was generated for as-grown samples from large diameter silicon boules. Fourier transform infrared spectroscopy (FTIR) was utilized to evaluate the oxygen content and infrared absorbance in the HF laser bandwidth (2.6 to 3 micrometer). The bulk absorption coefficient over this bandwidth was quantified by performing laser absorption calorimetry. Electrical properties were obtained by performing Hall measurements at room temperature and 77 K. The carrier concentration and impurity type were determined, and simple photoconduction experiments were performed to ascertain the presence of bound carriers. The thermal conductivity was measured directly utilizing the Fourier technique, and the coefficient of thermal expansion was determined for room temperature to 600 degrees Celsius via dilatometer measurements. Finally, crystallographic studies involving chemical etching were performed to delineate structural defects and determine their densities. Some of these procedures were repeated after the samples had been defect engineered, i.e., given a high temperature heat treatment, followed by a rapid quench. The simple heat treatment was shown to reduce the bulk absorption coefficient of the material by a factor of four over the HF laser bandwidth (2.6 to 3 micrometer). All results from this material assessment are reported.

Paper Details

Date Published: 23 October 1995
PDF: 16 pages
Proc. SPIE 2543, Silicon Carbide Materials for Optics and Precision Structures, (23 October 1995); doi: 10.1117/12.225294
Show Author Affiliations
William A. Goodman, W.J. Schafer Associates (United States)
Mark S. Goorsky, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 2543:
Silicon Carbide Materials for Optics and Precision Structures
Mark A. Ealey, Editor(s)

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