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Proceedings Paper

Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers
Author(s): J. Rieprich; M. Winterfeldt; J. Tomm; R. Kernke; P. Crump
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Paper Abstract

The lateral beam parameter product, BPPlat, and resulting lateral brightness of GaAs-based high-power broad-area diode lasers is strongly influenced by the thermal lens profile. We present latest progress in efforts using FEM simulation to interpret how variation in chip construction influences the thermal lens profile, itself determined experimentally using thermography (thermal camera). Important factors are shown to include the vertical (epitaxial) structure, the properties of the submount and the transition between chip and submount, whose behavior is shown to be consistent with the presence of a significant thermal barrier.

Paper Details

Date Published: 22 February 2017
PDF: 10 pages
Proc. SPIE 10085, Components and Packaging for Laser Systems III, 1008502 (22 February 2017); doi: 10.1117/12.2252931
Show Author Affiliations
J. Rieprich, Ferdinand-Braun-Institut (Germany)
M. Winterfeldt, Ferdinand-Braun-Institut (Germany)
J. Tomm, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
R. Kernke, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
P. Crump, Ferdinand-Braun-Institut (Germany)


Published in SPIE Proceedings Vol. 10085:
Components and Packaging for Laser Systems III
Alexei L. Glebov; Paul O. Leisher, Editor(s)

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