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Proceedings Paper

Submonolayer quantum-dot lasers
Author(s): Benjamin Lingnau; Kathy Lüdge; Nina Owschimikow
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Paper Abstract

Active media based on submonolayer (SML) quantum-dots are a novel gain material that potentially combines the high gain of semiconductor quantum-wells with the ultrafast gain recovery of Stranski-Krastanov quantumdots. By comparison of theory and experiment, we find an ultrafast gain recovery timescale well below one picosecond, along with a high optical gain. We investigate SML lasers theoretically and provide comparisons with conventional quantum-dot devices. We find a substantial increase in small-signal bandwidth and largesignal modulation capability. Our results show that semiconductor submonolayer laser and amplifier devices are promising candidates for high-speed optoelectronics as well as integrated photonics applications.

Paper Details

Date Published: 22 February 2017
PDF: 7 pages
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009816 (22 February 2017); doi: 10.1117/12.2252754
Show Author Affiliations
Benjamin Lingnau, Technische Univ. Berlin (Germany)
Kathy Lüdge, Technische Univ. Berlin (Germany)
Univ. of Auckland (New Zealand)
Nina Owschimikow, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 10098:
Physics and Simulation of Optoelectronic Devices XXV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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