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Proceedings Paper

Waveguide development using wafer fused GaP/GaAs in THz quantum cascade lasers
Author(s): Neelima Chandrayan; Xifeng Qian; William Goodhue
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Paper Abstract

A wafer fused GaP/GaAs waveguide was developed for THz QCLs to achieve high confinement factor benefiting from its lower refractive index in THz regime. The modal simulation of several waveguide structures using COMSOL showed an increase of confinement factor up to 2 as compared to regular waveguide; however it also resulted in high losses. Experimental results showed good electric characteristics but poor optical performance, which is mainly due to the degradation of crystal quality after high temperature process, confirmed by stress analysis and XRD. Therefore, a low temperature fusion process is necessary to fabricate GaP/GaAs THz waveguide.

Paper Details

Date Published: 24 February 2017
PDF: 6 pages
Proc. SPIE 10103, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, 101031S (24 February 2017); doi: 10.1117/12.2252716
Show Author Affiliations
Neelima Chandrayan, Univ. of Massachusetts Lowell (United States)
Xifeng Qian, Univ. of Massachusetts Lowell (United States)
William Goodhue, Univ. of Massachusetts Lowell (United States)


Published in SPIE Proceedings Vol. 10103:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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