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Proceedings Paper

Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation)
Author(s): Andrew M. Armstrong; Mary H. Crawford; Daniel D. Koleske; Erik C. Nelson; Isaac Wildeson; Parijat Deb
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Paper Abstract

Efficiency droop and the green gap are challenges to InGaN/GaN light emitting diodes (LEDs). Defects have been suggested to contribute to both effects, so understanding the origin of defects and their impact on LED performance is important to improving efficiency. This talk describes the use of deep level optical spectroscopy (DLOS) to characterize deep level defects in quantum well (QW) and quantum barrier (QB) regions of InGaN LEDs. The spatial dependence of deep level defect density in the MQW region and the evolution of QW deep level defects with indium alloying will be discussed.

Paper Details

Date Published: 20 April 2017
PDF: 1 pages
Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240W (20 April 2017); doi: 10.1117/12.2252683
Show Author Affiliations
Andrew M. Armstrong, Sandia National Labs. (United States)
Mary H. Crawford, Sandia National Labs. (United States)
Daniel D. Koleske, Sandia National Labs. (United States)
Erik C. Nelson, Lumileds, LLC (United States)
Isaac Wildeson, Lumileds, LLC (United States)
Parijat Deb, Lumileds, LLC (United States)


Published in SPIE Proceedings Vol. 10124:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI
Jong Kyu Kim; Michael R. Krames; Li-Wei Tu; Martin Strassburg, Editor(s)

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