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Proceedings Paper

Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks
Author(s): Michael Bendayan; Roi Sabo; Roee Zolberg; Yaakov Mandelbaum; Avraham Chelly; Avi Karsenty
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Paper Abstract

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Paper Details

Date Published: 20 February 2017
PDF: 8 pages
Proc. SPIE 10112, Photonic and Phononic Properties of Engineered Nanostructures VII, 101122A (20 February 2017); doi: 10.1117/12.2252681
Show Author Affiliations
Michael Bendayan, Rafael Advanced Defense Systems Ltd. (Israel)
Roi Sabo, Jerusalem College of Technology (Israel)
Roee Zolberg, Jerusalem College of Technology (Israel)
Yaakov Mandelbaum, Jerusalem College of Technology (Israel)
Avraham Chelly, Bar-Ilan Univ. (Israel)
Avi Karsenty, Jerusalem College of Technology (Israel)


Published in SPIE Proceedings Vol. 10112:
Photonic and Phononic Properties of Engineered Nanostructures VII
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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