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Proceedings Paper

Feasibility study of optical parametric amplification using CMOS compatible ring resonators
Author(s): Mahmoud Jazayerifar; Meysam Namdari; Ryan Hamerly; Dodd Gray; Christopher Rogers; Kambiz Jamshidi
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Paper Abstract

In this paper, we analytically describe the parametric amplification in ring resonators using silicon and silicon nitride waveguides. Achievable gain and bandwidth of the ring-based amplifiers are studied taking into account the Kerr nonlinearity for silicon nitride and Kerr nonlinearity as well as two photon absorption and free carrier absorption for silicon waveguides. Both telecom and 2-μm wavelengths are investigated in case of silicon. An approach for obtaining the optimum amplifier design without initiating the comb generation has been introduced. It is shown that there is a trade-off between the input pump and amplifier bandwidth. It is estimated that using optimum designs an amplifier with a gain and bandwidth of 10 dB and 10 GHz could be feasible with silicon ring resonators in 2 μm.

Paper Details

Date Published: 16 February 2017
PDF: 9 pages
Proc. SPIE 10106, Integrated Optics: Devices, Materials, and Technologies XXI, 101060A (16 February 2017); doi: 10.1117/12.2252635
Show Author Affiliations
Mahmoud Jazayerifar, TU Dresden (Germany)
Meysam Namdari, TU Dresden (Germany)
Ryan Hamerly, Stanford Univ. (United States)
National Institute of Informatics (Japan)
Dodd Gray, Stanford Univ. (United States)
Christopher Rogers, Stanford Univ. (United States)
Kambiz Jamshidi, TU Dresden (Germany)


Published in SPIE Proceedings Vol. 10106:
Integrated Optics: Devices, Materials, and Technologies XXI
Sonia M. García-Blanco; Gualtiero Nunzi Conti, Editor(s)

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