Share Email Print
cover

Proceedings Paper

Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product
Author(s): Yegao Xiao; Zhiqiang Li; Michel Lestrade; Zhanming S. Li
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this work, two-dimensional modeling of planar junction AlInAs avalanche photodiodes is reported. Modeling results of dark/photo current, multiplication gain, breakdown voltage, -3dB bandwidth and gain-bandwidth product, and excess noise etc., are presented. The modeling results of multiplication gain and -3dB bandwidth are consistent with the reported experimental demonstration. Design optimization is also explored for high gain-bandwidth product for such AlInAs avalanche photodiodes.

Paper Details

Date Published: 22 February 2017
PDF: 8 pages
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009825 (22 February 2017); doi: 10.1117/12.2252565
Show Author Affiliations
Yegao Xiao, Crosslight Software Inc. (Canada)
Zhiqiang Li, Crosslight Software Inc. (Canada)
Michel Lestrade, Crosslight Software Inc. (Canada)
Zhanming S. Li, Crosslight Software Inc. (Canada)


Published in SPIE Proceedings Vol. 10098:
Physics and Simulation of Optoelectronic Devices XXV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top