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Proceedings Paper

Seed laser diodes in pulsed operation: limitations and reliability
Author(s): Germain Le Galès; Simon Joly; Giulia Marcello; Guillaume Pedroza; Adèle Morisset; François Laruelle; Laurent Bechou
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Paper Abstract

Using InGaAs/AlGaAs 1060nm commercial Laser Diodes (LDs) and Laser Diode Modules (LDMs) under high current (> 2A) and nanosecond pulsed conditions offers a large flexibility for fiber Laser seeding applications. Nevertheless, the behavior and long term reliability of these LDs under such conditions is not well established. Our work focuses on determining the reliability of 1060nm seed LDs under such conditions by the extraction of Electro-Optical (EO) characteristics and the monitoring of their evolution during pulsed ageing tests. In this context, two segments of parasitic oscillations (“A” and “B” type) were observed in the optical response of LDs and LDMs driven under such conditions, with their associated threshold current (IthA and IthB) on three batches of Laser diodes, with different packaging. We observed a strong part-to-part variation in the value of IthA and a package dependency for IthB. We conducted a near-field and a time spectral analysis of the LDs optical responses. A near field widening, associated with A-type oscillations, and a temporal spectral broadening, associated with A-type and B-type oscillations, were highlighted. Step-stress ageing tests were then carried out on two batches of three LDMs each, with different values of IthA (3.9A, 7A and 11.2A for the first batch, 2.8A, 7.4A and 9.3A for the second). The modules with the lowest IthA values were the first to fail suggesting this IthA threshold as a key parameter for early failure detection. One module exhibited a gradual drop of the measured optical power. No variation of the optical power or of the IthA and IthB value were observed on the other modules, which were able to withstand the chosen ageing conditions without any noticeable decrease of their performances.

Paper Details

Date Published: 22 February 2017
PDF: 9 pages
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100980S (22 February 2017); doi: 10.1117/12.2252428
Show Author Affiliations
Germain Le Galès, Lab. IMS, Univ. de Bordeaux, CNRS (France)
Ctr. Technologie Optique and Lasers ALPhANOV (France)
Simon Joly, Lab. IMS, Univ. de Bordeaux, CNRS (France)
Giulia Marcello, Univ. degli Studi di Cagliari, DIEE (Italy)
Guillaume Pedroza, Ctr. Technologie Optique and Lasers ALPhANOV (France)
Adèle Morisset, Ctr. Technologie Optique and Lasers ALPhANOV (France)
François Laruelle, 3SP Technologies S.A.S. (France)
Laurent Bechou, Lab. IMS, Univ. de Bordeaux, CNRS (France)


Published in SPIE Proceedings Vol. 10098:
Physics and Simulation of Optoelectronic Devices XXV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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