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Proceedings Paper

Passive photonic components and germanium contacts for a 200mm germanium-on-insulator photonic platform (Conference Presentation)
Author(s): Mathieu Bertrand; Alban Gassenq; Kevin Guilloy; Nicolas Pauc; Julie Widiez; Jean-Michel Hartmann; Daivid Fowler; Thomas Zabel; Hans C. Sigg; Jérôme Faist; Alexei Tchelnokov; Vincent Calvo; Vincent Reboud
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Paper Abstract

Germanium-On-Insulator based photonics is a promising technological platform. As part of the initial development of a germanium photonic platform, optical losses in passive structures and electrical injection for active components have been studied on Germanium-On-Insulator (GeOI) substrates fabricated using Smart-Cut™ technology [1]. The low threading dislocation density of the germanium (Ge) film is expected to reduce unwanted carrier recombination leading to improved performance of the passive and active Ge components. Fiber-couplers and 500nm square waveguides have been fabricated from 200-mm GeOI substrates allowing optical loss measurements in the TM mode at a wavelength of 2.3µm. Propagation losses were evaluated at 1.5dB/cm. Circular-shaped radius bends and evanescent couplers/splitters have also been simulated, fabricated and characterized to determine the bending losses and the coupling coefficient for ring resonators. Furthermore, innovative bend shapes showed lower bending losses than those with circular-shaped radii, which would allow higher component densities. Finally, the electrical injection is of prime importance in fabricating efficient active components on GeOI. For this, the rectifying or ohmic behavior at the metal-semiconductor contact and its dependence as a function of the Ge doping or metal type has to be precisely known. In particular, we examined the challenging question of the contact resistance between metal and n-type Ge. A study has been conducted using Transfer Length Model (TLM) structures to determine the most suitable metal to contact n-doped and p-doped germanium. [1] Reboud, V. et al. Proc. SPIE 9367 (2015). [2] Kang, J. et al. Opt. Express 24, 11855-11864 (2016).

Paper Details

Date Published: 28 April 2017
PDF: 1 pages
Proc. SPIE 10108, Silicon Photonics XII, 1010818 (28 April 2017); doi: 10.1117/12.2252404
Show Author Affiliations
Mathieu Bertrand, CEA-LETI (France)
Univ. Grenoble Alpes (France)
MINATEC (France)
Alban Gassenq, CEA-INAC (France)
Univ. Grenoble Alpes (France)
Kevin Guilloy, CEA-INAC (France)
Univ. Grenoble Alpes (France)
Nicolas Pauc, CEA-INAC (France)
Univ. Grenoble Alpes (France)
Julie Widiez, CEA-LETI (France)
Univ. Grenoble Alpes (France)
MINATEC (France)
Jean-Michel Hartmann, CEA-LETI (France)
Univ. Grenoble Alpes (France)
MINATEC (France)
Daivid Fowler, CEA-LETI (France)
Univ. Grenoble Alpes (France)
MINATEC (France)
Thomas Zabel, Paul Scherrer Institut (Switzerland)
Hans C. Sigg, Paul Scherrer Institut (Switzerland)
Jérôme Faist, Institute for Quantum Electronics, ETH Zürich (Switzerland)
Alexei Tchelnokov, MINATEC (France)
Univ. Grenoble Alpes (France)
CEA-LETI (France)
Vincent Calvo, Univ. Grenoble Alpes (France)
CEA-INAC (France)
Vincent Reboud, CEA-LETI (France)
Univ. Grenoble Alpes (France)
MINATEC (France)


Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

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