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Proceedings Paper

Laser and transistor material on Si substrate
Author(s): Dzianis Saladukha; Tomasz J. Ochalski; Felipe Murphy Armando; Michael B. Clavel; Mantu K. Hudait
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Paper Abstract

In this work we study Ge structures grown on silicon substrates. We use photoluminescence and photoreflectance to determine both direct and indirect gap of Ge under tensile strain. The strain is induced by growing the Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled by a 30 band k·p model based on first principles calculations. Characterization techniques show very good agreement with the calculated energy values.

Paper Details

Date Published: 20 February 2017
PDF: 7 pages
Proc. SPIE 10108, Silicon Photonics XII, 101080E (20 February 2017); doi: 10.1117/12.2252383
Show Author Affiliations
Dzianis Saladukha, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
Tomasz J. Ochalski, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
Felipe Murphy Armando, Tyndall National Institute (Ireland)
Michael B. Clavel, Virginia Polytechnic Institute and State Univ. (United States)
Mantu K. Hudait, Virginia Polytechnic Institute and State Univ. (United States)


Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

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