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Proceedings Paper

High-brightness lasers on silicon by beam combining
Author(s): Eric J. Stanton; Alexander Spott; Nicolas Volet; Michael L. Davenport; John E. Bowers
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Paper Abstract

High-brightness lasers are widely used in fields such as spectroscopy, infrared countermeasures, free-space communication, and industrial manufacturing. Integration of a broad-band, multi-spectral laser is made possible by heterogeneously integrating multiple gain materials on one silicon (Si) substrate chip. A single multi-spectral output with high beam quality can be achieved by wavelength beam combining in multiple stages: within the gain bandwidth of each laser material and then coarsely combining each spectral band to a single output waveguide. To make power scaling feasible with this system, heterogeneously integrated lasers spanning the near- to the mid-infrared with corresponding low-loss wavelength beam combining elements on chip must be demonstrated. In this work, a review of multi-spectral lasers integrated on Si is presented and various waveguide materials are discussed for spanning the visible to the mid-infrared. Recent work integrating 2.0μm diode and 4.8μm quantum cascade lasers on Si extend the previously available 1.3μm and 1.5μm diode lasers on Si to the mid-infrared. Spectral beam combining elements for spanning the visible to the mid-infrared with low loss are discussed.

Paper Details

Date Published: 20 February 2017
PDF: 11 pages
Proc. SPIE 10108, Silicon Photonics XII, 101080K (20 February 2017); doi: 10.1117/12.2252310
Show Author Affiliations
Eric J. Stanton, Univ. of California, Santa Barbara (United States)
Alexander Spott, Univ. of California, Santa Barbara (United States)
Nicolas Volet, Univ. of California, Santa Barbara (United States)
Michael L. Davenport, Univ. of California, Santa Barbara (United States)
John E. Bowers, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

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