Share Email Print
cover

Proceedings Paper

Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications
Author(s): Ludovic Dupré; Marjorie Marra; Valentin Verney; Bernard Aventurier; Franck Henry; François Olivier; Sauveur Tirano; Anis Daami; François Templier
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.

Paper Details

Date Published: 16 February 2017
PDF: 8 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010422 (16 February 2017); doi: 10.1117/12.2252196
Show Author Affiliations
Ludovic Dupré, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Marjorie Marra, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Valentin Verney, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Bernard Aventurier, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Franck Henry, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
François Olivier, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Sauveur Tirano, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
Anis Daami, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)
François Templier, Univ. Grenoble Alpes, CEA-LETI, III-V Lab. (France)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

© SPIE. Terms of Use
Back to Top