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Proceedings Paper

Using plasmon-induced resistance changes in a tunable metal grating for all-electronic readout
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Paper Abstract

In this work, we take advantage of the resistive losses induced by plasmons excited at optical frequencies to design, fabricate and characterize a metal grating based CMOS-compatible light detector. A change of resistance is caused by increased electron scattering introduced by localized and delocalized surface plasmons in an applied current. We realize a spectral and polarization dependent detector that can be read out electronically. The optical response of the sensor can be tuned from the visible to IR regime by changing the geometry of the metal grating, which enables a variety of applications for an on-chip ultra-wideband plasmonic detector.

Paper Details

Date Published: 27 January 2017
PDF: 9 pages
Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111Q (27 January 2017); doi: 10.1117/12.2252158
Show Author Affiliations
Borui Chen, Univ. at Buffalo (United States)
Alec Cheney, Univ. at Buffalo (United States)
Tianmu Zhang, Univ. at Buffalo (United States)
Tim Thomay, Univ. at Buffalo (United States)
Alexander Cartwright, Univ. at Buffalo (United States)


Published in SPIE Proceedings Vol. 10111:
Quantum Sensing and Nano Electronics and Photonics XIV
Manijeh Razeghi, Editor(s)

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