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Proceedings Paper

Intersubband absorption in m-plane ZnO/ZnMgO MQWs
Author(s): Miguel Montes Bajo; Julen Tamayo-Arriola; Arnaud Jollivet; Maria Tchernycheva; François H. Julien; Romain Peretti; Jérôme Faist; Maxime Hugues; Jean-Michel Chauveau; Adrian Hierro
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Paper Abstract

ZnO has great potential for devices in the mid IR and the THz range through the use of intersubband (ISB) transitions in multiple quantum wells (MQWs), although exploiting these transitions requires great control of the epitaxial layers as well as of the physics involved. In this work we present an analysis of non-polar ZnO grown homoepitaxially by molecular beam epitaxy on m-plane ZnO substrates as an ISB optical absorber. The MQWs were characterized under a 45°-bevelled multi-pass waveguide configuration allowing the observation at room temperature of an ISB transition in the 4-6 μm region for p-polarized incident light.

Paper Details

Date Published: 24 February 2017
PDF: 5 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050O (24 February 2017); doi: 10.1117/12.2252056
Show Author Affiliations
Miguel Montes Bajo, Univ. Complutense de Madrid (Spain)
Julen Tamayo-Arriola, Univ. Complutense de Madrid (Spain)
Arnaud Jollivet, Univ. Paris-Sud 11 (France)
Univ. Paris-Saclay (France)
Maria Tchernycheva, Univ. Paris-Sud 11 (France)
Univ. Paris-Saclay (France)
François H. Julien, Univ. Paris-Sud 11 (France)
Univ. Paris-Saclay (France)
Romain Peretti, ETH Zürich (Switzerland)
Jérôme Faist, ETH Zürich (Switzerland)
Maxime Hugues, Univ. Côte d'Azur, CNRS, CRHEA (France)
Jean-Michel Chauveau, Univ. Côte d'Azur, CNRS, CRHEA (France)
Adrian Hierro, Univ. Complutense de Madrid (Spain)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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