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Proceedings Paper

Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells
Author(s): Andreas Hangleiter; Torsten Langer; Philipp Henning; Fedor Alexej Ketzer; Philipp Horenburg; Ernst Ronald Korn; Heiko Bremers; Uwe Rossow
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Paper Abstract

Efficient radiative recombination is one of the key properties enabling high performance light emitting devices. We have performed an in-depth experimental analysis of radiative recombination in polar, nonpolar, and semipolar III-nitride quantum wells (QWs), which allows us to elucidate and quantify its mechanisms. We are able to distinguish between localized and free exciton recombination, we clearly see the effect of polarization fields via the quantum-confined Stark effect, and we observe the effect of the valence band structure associated with crystal orientation and strain.

Paper Details

Date Published: 16 February 2017
PDF: 8 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040Q (16 February 2017); doi: 10.1117/12.2252036
Show Author Affiliations
Andreas Hangleiter, Technische Univ. Braunschweig (Germany)
Torsten Langer, Technische Univ. Braunschweig (Germany)
Philipp Henning, Technische Univ. Braunschweig (Germany)
Fedor Alexej Ketzer, Technische Univ. Braunschweig (Germany)
Philipp Horenburg, Technische Univ. Braunschweig (Germany)
Ernst Ronald Korn, Technische Univ. Braunschweig (Germany)
Heiko Bremers, Technische Univ. Braunschweig (Germany)
Uwe Rossow, Technische Univ. Braunschweig (Germany)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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