Share Email Print
cover

Proceedings Paper

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum-wells
Author(s): M. Biswas; A. Balgarkashi; S. Singh; N. Shinde; R. L. Makkar; A. Bhatnagar; Subhananda Chakrabarti
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Five-period GaAs1−xNx/GaAs multiple quantum wells (MQWs) were grown on GaAs(001) substrates under different nitrogen background pressures through solid-source molecular beam epitaxy and the structural and optical properties at low temperature were investigated. High resolution x-ray diffraction revealed sharper satellite peaks observed for GaAs0.978N0.022/GaAs MQWs as compared to GaAs0.982N0.018/GaAs MQWs, indicating better interfaces. The MQWs with higher nitrogen content exhibited high photoluminescence (PL) intensity, whereas a degraded PL intensity was observed for the latter, attributed to reduction in surface recombination with high nitrogen incorporation. Moreover, the spectrum for the MQWs with higher nitrogen content was observed to be consisted of several Gaussian spectra, indicating thickness variation of QWs caused by randomness in distribution of N atoms. In the low energy regime of PL, a long asymmetric tail was observed because of nitrogen introduced potential fluctuations. Rapid thermal annealing enhanced PL intensity by multi-fold and substantially reduced the full width at maximum because of homogenization of MQWs. This investigation could enhance understandings of the MQWs-based optoelectronic devices.

Paper Details

Date Published: 27 January 2017
PDF: 7 pages
Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011139 (27 January 2017); doi: 10.1117/12.2251981
Show Author Affiliations
M. Biswas, Indian Institute of Technology Bombay (India)
A. Balgarkashi, Indian Institute of Technology Bombay (India)
S. Singh, Indian Institute of Technology Bombay (India)
N. Shinde, Society for Applied Microwave Electronics Engineering and Research (India)
R. L. Makkar, Society for Applied Microwave Electronics Engineering and Research (India)
A. Bhatnagar, Society for Applied Microwave Electronics Engineering and Research (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 10111:
Quantum Sensing and Nano Electronics and Photonics XIV
Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top