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Proceedings Paper

InGaN diode pumped Pr:SrF2 laser at 639 nm wavelength
Author(s): Martin Fibrich; Maxim Doroshenko; Jan Šulc; Vasilii Konyushkin; Andrei Nakladov; Helena Jelínková
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Paper Abstract

We report on Pr:SrF2 single crystal laser operation at 639nm wavelength under blue laser diode pumping. The laser system was operated in the pulsed regime at 100 Hz repetition rate and 2 ms pulse duration. Using 3.5W InGaN laser diode as a pump source, 6mW of the mean output power at 639nm was extracted from the Pr:SrF2 sample. The corresponding slope efficiency related to the absorbed mean power was 16.4 %.

Paper Details

Date Published: 17 February 2017
PDF: 5 pages
Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 1008220 (17 February 2017); doi: 10.1117/12.2251955
Show Author Affiliations
Martin Fibrich, Czech Technical Univ. in Prague (Czech Republic)
Institute of Physics ASCR (Czech Republic)
Maxim Doroshenko, A. M. Prokhorov General Physics Institute (Russian Federation)
Jan Šulc, Czech Technical Univ. in Prague (Czech Republic)
Vasilii Konyushkin, A. M. Prokhorov General Physics Institute (Russian Federation)
Andrei Nakladov, A. M. Prokhorov General Physics Institute (Russian Federation)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)


Published in SPIE Proceedings Vol. 10082:
Solid State Lasers XXVI: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)

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