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Proceedings Paper

Broadband silicon bridge waveguide polarization beam splitter
Author(s): Thomas Y. L. Ang; Jun Rong Ong; Soon Thor Lim; Bryan Pawlina; Ezgi Sahin; Ching Eng Png; Hong Son Chu; G. F. R. Chen; D. T. H. Tan
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Paper Abstract

We have successfully fabricated and measured our silicon bridge waveguide polarization beam splitter (PBS). Our proposed PBS is based on a bend directional coupler with a bend bridge waveguide and is experimentally realized using silicon waveguide thickness of 220 nm and 250 nm, which are the commonly used silicon thickness for silicon photonics manufacturing. Our experimental results demonstrated high extinction ratio of > 20 dB for the TE-like mode, and > 15 dB for the TM-like mode across a broad bandwidth of 90 nm that covers the entire C-band with a small footprint of ~18×9 μm2. On-chip high performance PBS is important for polarization diversity in integrated photonics, and for communication applications such as dual-polarization quadrature phase-shift keying (DP-QPSK) modulation.

Paper Details

Date Published: 20 February 2017
PDF: 6 pages
Proc. SPIE 10108, Silicon Photonics XII, 101080A (20 February 2017); doi: 10.1117/12.2251655
Show Author Affiliations
Thomas Y. L. Ang, A*STAR Institute of High Performance Computing (Singapore)
Jun Rong Ong, A*STAR Institute of High Performance Computing (Singapore)
Soon Thor Lim, A*STAR Institute of High Performance Computing (Singapore)
Optic2Connect Pte Ltd. (Singapore)
Bryan Pawlina, A*STAR Institute of High Performance Computing (Singapore)
Univ. of British Columbia (Canada)
Ezgi Sahin, Singapore Univ. of Technology & Design (Singapore)
Ching Eng Png, A*STAR Institute of High Performance Computing (Singapore)
Optic2Connect Pte Ltd. (Singapore)
Hong Son Chu, A*STAR Institute of High Performance Computing (Singapore)
G. F. R. Chen, Singapore Univ. of Technology & Design (Singapore)
D. T. H. Tan, Singapore Univ. of Technology & Design (Singapore)


Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

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