Share Email Print

Proceedings Paper

InGaN-based flexible light emitting diodes
Author(s): C. Bayram
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Novel layer release and transfer technology of single-crystalline GaN semiconductors is attractive for enabling many novel applications including flexible photonics and hybrid device integration. To date, light emitting diode (LED) research has been primarily focused on rigid devices due to the thick growth substrate. This prevented fundamental research in flexible inorganic LEDs, and limited the applications of LEDs in the solid state lighting (due to the substrate cost) and in biophotonics (i.e. optogenetics) (due to LED rigidness). In the literature, a number of methods to achieve layer transfer have been reported including the laser lift-off, chemical lift-off, and Smartcut. However, the release of films of LED layers (i.e. GaN semiconductors) has been challenging since their elastic moduli and chemical resistivity are much higher than most conventional semiconductors. In this talk, we are going to review the existing technologies and new mechanical release techniques (i.e. spalling) to overcome these problems.

Paper Details

Date Published: 16 February 2017
PDF: 8 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041Y (16 February 2017); doi: 10.1117/12.2251618
Show Author Affiliations
C. Bayram, Univ. of Illinois at Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

© SPIE. Terms of Use
Back to Top