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Proceedings Paper

Electro-optic KTN deflector stabilized with 405-nm light irradiation for wavelength-swept light source
Author(s): Yuzo Sasaki; Seiji Toyoda; Takashi Sakamoto; Joji Yamaguchi; Masahiro Ueno; Tadayuki Imai; Tadashi Sakamoto; Masatoshi Fujimoto; Mahiro Yamada; Koei Yamamoto; Eiichi Sugai; Shogo Yagi
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Paper Abstract

We have developed a highly stable electro-optic KTa1-xNbxO3 (KTN) deflector by enhancing electron transportation through KTN crystal. The amount of current is increased with 405-nm light irradiation to rapidly generate a stable refractive-index change, which induces deflection. The deflection angle is set at 160 mrad within tens of seconds and is kept at that angle for 3,000 hours. The developed deflector has been applied to a wavelength-swept light source to measure the thickness of Si wafers with a 3.6-mm optical length. The precision of 0.1-μm has been continuously achieved corresponding to the stability of the KTN deflector.

Paper Details

Date Published: 16 February 2017
PDF: 6 pages
Proc. SPIE 10100, Optical Components and Materials XIV, 101000H (16 February 2017); doi: 10.1117/12.2251413
Show Author Affiliations
Yuzo Sasaki, NTT Device Innovation Ctr. (Japan)
Seiji Toyoda, NTT Device Innovation Ctr. (Japan)
Takashi Sakamoto, NTT Device Innovation Ctr. (Japan)
Joji Yamaguchi, NTT Device Innovation Ctr. (Japan)
Masahiro Ueno, NTT Device Innovation Ctr. (Japan)
Tadayuki Imai, NTT Device Innovation Ctr. (Japan)
Tadashi Sakamoto, NTT Device Innovation Ctr. (Japan)
Masatoshi Fujimoto, Hamamatsu Photonics K.K. (Japan)
Mahiro Yamada, Hamamatsu Photonics K.K. (Japan)
Koei Yamamoto, Hamamatsu Photonics K.K. (Japan)
Eiichi Sugai, NTT Advanced Technology Corp. (Japan)
Shogo Yagi, NTT Advanced Technology Corp. (Japan)


Published in SPIE Proceedings Vol. 10100:
Optical Components and Materials XIV
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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