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Proceedings Paper

A low noise readout integrated circuit for Nb5N6 microbolometer array detector
Author(s): Zhou Jiang; Chao Wan; Peng Xiao; Chengtao Jiang; Xuecou Tu; Xiaoqing Jia; Lin Kang; Jian Chen; Peiheng Wu
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Paper Abstract

We present a readout circuit for 1 × 64 Nb5N6 microbolometer array detector. The intrinsic average responsivity of the detectors in the array is 650 V/W, and the corresponding noise equivalent power (NEP) is 17 pW/√Hz. Due to the low noise of the detector, we design a low noise readout circuit with 64 channels. The readout integrated circuit (ROIC) is fabricated under CMOS process with 0.18μm design rule, which has built-in bias and adjustable numerical-controlled output current. Differential structure is used for each pixel to boost capacity of resisting disturbance. A multiplexer and the second stage amplifier is followed after the ROIC. It is shown that the ROIC achieves an average gain of ~47dB and a voltage noise spectral density of ~9.34nV/√Hz at 10KHz. The performance of this readout circuit nearly fulfills the requirements for THz array detector. This readout circuit is fit for the detector, which indicates a good way to develop efficient and low-cost THz detector system.

Paper Details

Date Published: 24 February 2017
PDF: 6 pages
Proc. SPIE 10103, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, 101030A (24 February 2017); doi: 10.1117/12.2251400
Show Author Affiliations
Zhou Jiang, Nanjing Univ. (China)
Chao Wan, Nanjing Univ. (China)
Peng Xiao, Nanjing Univ. (China)
Chengtao Jiang, Nanjing Univ. (China)
Xuecou Tu, Nanjing Univ. (China)
Xiaoqing Jia, Nanjing Univ. (China)
Lin Kang, Nanjing Univ. (China)
Jian Chen, Nanjing Univ. (China)
Peiheng Wu, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 10103:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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