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Proceedings Paper

Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology
Author(s): S. M. Sherif; M. Swillam
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Paper Abstract

We introduce an ultra-compact plasmonic sensor for lab on chip applications. The device utilizes the heavily doped Si for introducing plasmonic effects. The use of heavily doped silicon instead of metals for plasmonic excitation has the advantage of reduced losses and CMOS compatibility. The proposed device has a simple structure, also it can be easily fabricated using the mature CMOS fabrication technology. The device structure is made of a heavily doped silicon layer, on a silicon dioxide substrate, while the silicon layer is etched to form a slot waveguide, and a rectangular cavity. The proposed plasmonic resonator is operational in the mid infrared spectral region. The sensor possesses a high sensitivity of 5000nm/RIU in the mid infrared range.

Paper Details

Date Published: 20 February 2017
PDF: 6 pages
Proc. SPIE 10112, Photonic and Phononic Properties of Engineered Nanostructures VII, 101120V (20 February 2017); doi: 10.1117/12.2251356
Show Author Affiliations
S. M. Sherif, The American Univ. in Cairo (Egypt)
M. Swillam, The American Univ. in Cairo (Egypt)


Published in SPIE Proceedings Vol. 10112:
Photonic and Phononic Properties of Engineered Nanostructures VII
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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