Share Email Print
cover

Proceedings Paper

A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers
Author(s): Akshay Balgarkashi; Mahitosh Biswas; Sandeep Singh; Debabrata Das; Anuj Bhatnagar; Roshan Makkar; Nilesh Shinde; Subhananda Chakrabarti
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Epitaxially-grown 10-layer coupled InAs quantum dots with GaAsN/GaAs barrier layers have been investigated. The PL spectra was seen to be a complex convolution of bimodal distribution of QDs along with an asymmetric signature introduced by incorporation of nitrogen into the structures. Reducing the GaAsN/GaAs barrier thickness (from 2/16nm to 2/8nm) resulted in an improvement of PL linewidth as low as 20meV of the dominant PL peak for the sample with thinnest barrier layer. A blueshift in emission was observed due to higher indium intermixing as a result of an increase in overall strain in the multilayer structure. The highly asymmetric exponential tail signature evident from the PL spectra of as-grown samples indicated a higher presence of localized N-induced excitonic states near the conduction band edge. Samples with thicker barriers showed relatively lower asymmetry compared to samples with thinner barriers. Also, samples with thinner barriers showed an arrest in blueshift in the PL spectra with annealing temperature indicating thermal stability.

Paper Details

Date Published: 20 February 2017
PDF: 8 pages
Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 1011412 (20 February 2017); doi: 10.1117/12.2251290
Show Author Affiliations
Akshay Balgarkashi, Indian Institute of Technology Bombay (India)
Mahitosh Biswas, Indian Institute of Technology Bombay (India)
Sandeep Singh, Indian Institute of Technology Bombay (India)
Debabrata Das, Indian Institute of Technology Bombay (India)
Anuj Bhatnagar, Society for Applied Microwave Electronics Engineering and Research (India)
Roshan Makkar, Society for Applied Microwave Electronics Engineering and Research (India)
Nilesh Shinde, Society for Applied Microwave Electronics Engineering and Research (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 10114:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV
Diana L. Huffaker; Holger Eisele, Editor(s)

© SPIE. Terms of Use
Back to Top