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Proceedings Paper

Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition
Author(s): Seungkuk Kuk; Jongmin Park; Tao Zhang; David J. Hwang
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Paper Abstract

In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH4/NH3 gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.

Paper Details

Date Published: 20 February 2017
PDF: 6 pages
Proc. SPIE 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII, 1009105 (20 February 2017); doi: 10.1117/12.2251269
Show Author Affiliations
Seungkuk Kuk, Stony Brook Univ. (United States)
Jongmin Park, Stony Brook Univ. (United States)
Tao Zhang, Stony Brook Univ. (United States)
David J. Hwang, Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 10091:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII
Beat Neuenschwander; Costas P. Grigoropoulos; Tetsuya Makimura; Gediminas Račiukaitis, Editor(s)

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