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Proceedings Paper

Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation)
Author(s): Fan Ren; Stephen J. Pearton; Tsung Sheng Kang; David J. Cheney; Brent P. Gila
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Paper Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) showed its promising performance in high power and high frequency, which can be used for applications such as satellite-based communication networks, inverter units in hybrid electric vehicles and advanced radar systems. However, intrinsic defects and defects generated during the device fabrication degraded HEMT performance, such as drain current collapse, high gate leakage, and lower rf power density and power add efficiency. Furthermore, subsequent electrical stressing of the HEMTs during operation leads to creation of more traps and further device degradation through various mechanisms, including gate contact sinking, shallow trap formations, and the inverse piezoelectric effect. It is highly desirable to have non-destructive methods available to identify the activation energies of the defects and spatial location of trap states in HEMT. A sub-bandgap optical pumping technique was developed to identify trap locations in AlGaN/GaN HEMTs. By varying photon fluxes, the traps with different activation energies appeared at different photon flux levels. This implies that the defects originate at different physical locations in the HEMT. The locations of the traps identified with the sub-bandgap optical pumping methods confirmed by gate pulse measurements under optical pumping.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041A (19 April 2017); doi: 10.1117/12.2251166
Show Author Affiliations
Fan Ren, Univ. of Florida (United States)
Stephen J. Pearton, Univ. of Florida (United States)
Tsung Sheng Kang, Univ of Florida (United States)
David J. Cheney, Univ. of Florida (United States)
Brent P. Gila, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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