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Proceedings Paper

Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures
Author(s): R. Rossignol; J. B. Rodriguez; Q. Durlin; H. Aït-Kaci; J. P. Perez; F. Martinez; F. Gonzales Posada; P. Christol
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Paper Abstract

The knowledge of carrier concentration of doped or non-intentionally doped layer structures grown by Molecular Beam Epitaxy (MBE) is crucial to fabricate and manage design of new advanced photodetectors called "barrier structures". This communication reports on capacitance-voltage (C-V) study on MOS structure. Simulation to define specific MOS design, allowing doping layer concentration extraction by measurements, is performed. MOS structures based on InAs/GaSb Longwave infrared (LWIR) superlattice have been fabricated and characterized. Results obtained were analyzed and compared with simulations.

Paper Details

Date Published: 27 January 2017
PDF: 9 pages
Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101111H (27 January 2017); doi: 10.1117/12.2251153
Show Author Affiliations
R. Rossignol, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
J. B. Rodriguez, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
Q. Durlin, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
H. Aït-Kaci, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
J. P. Perez, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
F. Martinez, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
F. Gonzales Posada, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
P. Christol, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)


Published in SPIE Proceedings Vol. 10111:
Quantum Sensing and Nano Electronics and Photonics XIV
Manijeh Razeghi, Editor(s)

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