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Proceedings Paper

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Author(s): Chao Shen; Tien Khee Ng; Changmin Lee; John T. Leonard; Shuji Nakamura; James S. Speck; Steven P. Denbaars; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi
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Paper Abstract

III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the “efficiency droop” effect and the high-speed performance is limited by a relatively small -3 dB modulation bandwidth (<100 MHz). InGaN-based LDs were recently studied as a droop-free, high-speed emitter; yet it is associated with speckle-noise and safety concerns. In this paper, we presented the semipolar InGaN-based violet-blue emitting superluminescent diodes (SLDs) as a high-brightness and high-speed light source, combining the advantages of LEDs and LDs. Utilizing the integrated passive absorber configuration, an InGaN/GaN quantum well (QW) based SLD was fabricated on semipolar GaN substrate. Using SLD to excite a YAG:Ce phosphor, white light can be generated, exhibiting a color rendering index of 68.9 and a color temperature of 4340 K. Besides, the opto-electrical properties of the SLD, the emission pattern of the phosphor-converted white light, and the high-speed (Gb/s) visible light communication link using SLD as the transmitter have been presented and discussed in this paper.

Paper Details

Date Published: 16 February 2017
PDF: 10 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041U (16 February 2017); doi: 10.1117/12.2251144
Show Author Affiliations
Chao Shen, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Tien Khee Ng, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Changmin Lee, Univ. of California, Santa Barbara (United States)
John T. Leonard, Univ. of California, Santa Barbara (United States)
Shuji Nakamura, Univ. of California, Santa Barbara (United States)
James S. Speck, Univ. of California, Santa Barbara (United States)
Steven P. Denbaars, Univ. of California, Santa Barbara (United States)
Ahmed Y. Alyamani, King Abdulaziz City for Science and Technology (Saudi Arabia)
Munir M. El-Desouki, King Abdulaziz City for Science and Technology (Saudi Arabia)
Boon S. Ooi, King Abdullah Univ. of Science and Technology (Saudi Arabia)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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