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Proceedings Paper

InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain
Author(s): Q. Durlin; J. P. Perez; R. Rossignol; J. B. Rodriguez; L. Cerutti; B. Delacourt; J. Rothman; C. Cervera; P. Christol
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Paper Abstract

We studied the Ga-free InAs/InAsSb type-II superlattice (T2SL) period, thickness and antimony composition, in order to define an optimized structure suitable for detection of the full mid-wavelength infrared domain (MWIR). The SL structures were fabricated by MBE on n-type GaSb substrates and exhibited cut-off wavelengths between 5μm and 5.5μm at 150K. The growth procedure used to achieve strain-balanced structures is reported and first structural and optical results, made of high-resolution Xray diffraction pattern, AFM image scan, photoluminescence (PL) and time resolved photoluminescence measurements (TRPL), are presented and analyzed.

Paper Details

Date Published: 27 January 2017
PDF: 10 pages
Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011112 (27 January 2017); doi: 10.1117/12.2250908
Show Author Affiliations
Q. Durlin, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
J. P. Perez, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
R. Rossignol, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
J. B. Rodriguez, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
L. Cerutti, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)
B. Delacourt, CEA-LETI (France)
J. Rothman, CEA-LETI (France)
C. Cervera, CEA-LETI (France)
P. Christol, Univ. Montpellier, Institut d'Électronique et des Systèmes, CNRS (France)


Published in SPIE Proceedings Vol. 10111:
Quantum Sensing and Nano Electronics and Photonics XIV
Manijeh Razeghi, Editor(s)

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