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Proceedings Paper

Doping, co-doping, and defect effects on the plasmonic activity of ZnO-based transparent conductive oxides
Author(s): Arrigo Calzolari; Alessandra Catellani
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Paper Abstract

Using simulations from first principles we investigate the microscopic role of doping on the optoelectronic properties of X-doped ZnO (XZO, X=Al, F), as transparent conductive oxide for energy applications. We show how the interplay between (co)dopants and defects affects TCO characteristics of the samples. Finally, we study the plasmonic activity of XZO in the near-IR/visible range and in particular at wavelength relevant for telecommunications (1.5 μm), confirming recent experimental results.

Paper Details

Date Published: 24 February 2017
PDF: 9 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050G (24 February 2017); doi: 10.1117/12.2250736
Show Author Affiliations
Arrigo Calzolari, Istituto Nanoscienze (Italy)
Alessandra Catellani, Istituto Nanoscienze (Italy)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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