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Proceedings Paper

Exciton Mott transition in GaAs studied by terahertz spectroscopy
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Paper Abstract

We performed optical pump-THz probe spectroscopy on bulk GaAs to investigate the nature of exciton Mott transition. The behavior of excitonic correlation in the proximity of the Mott transition density is elucidated through the resonant excitation of 1s excitons with using a nonlinear terahertz spectroscopy technique. We discuss the anomalous charge carrier dynamics of the metallic phase on the verge of Mott transition that appears only at low temperatures.

Paper Details

Date Published: 23 February 2017
PDF: 6 pages
Proc. SPIE 10102, Ultrafast Phenomena and Nanophotonics XXI, 101020T (23 February 2017); doi: 10.1117/12.2250735
Show Author Affiliations
Fumiya Sekiguchi, The Univ. of Tokyo (Japan)
Changsu Kim, The Univ. of Tokyo (Japan)
Hidefumi Akiyama, The Univ. of Tokyo (Japan)
Ryo Shimano, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 10102:
Ultrafast Phenomena and Nanophotonics XXI
Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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