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Proceedings Paper

Multiband modification of III-V dilute nitrides for IBSC application
Author(s): Nazmul Ahsan; Naoya Miyashita; Kin Man Yu; Wladek Walukiewicz; Yoshitaka Okada
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Paper Abstract

The subband features E and E+ for the conduction band of III-V dilute nitride alloys make them promising for intermediate band solar cell application. However, presence of bandgap states can limit the two-step photon absorption activity, a necessary requirement for IBSC functionality. A model analysis is performed to characterize the density of states. The sub-band tails states are characterized using a temperature-dependent map of photo-modulated reflectance spectroscopy for GaNAs thin films grown on GaAs substrates using molecular beam epitaxy. The effect of indium and antimony incorporation on the subband features were investigated. Marked improvements in the thin films were observed both for the lower (E) and the upper (E+) conduction bands (CB) when In was introduced with marginal enhancement by Sb. These improvements are associated with suppression of tail states below both the E and E+ bands. Sb rather mainly plays a surfactant role improving the abruptness of the GaNAs/GaAs hetero-interface.

Paper Details

Date Published: 29 March 2017
PDF: 8 pages
Proc. SPIE 10099, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI, 100990I (29 March 2017); doi: 10.1117/12.2250700
Show Author Affiliations
Nazmul Ahsan, The Univ. of Tokyo (Japan)
Naoya Miyashita, The Univ. of Tokyo (Japan)
Kin Man Yu, City Univ. of Hong Kong (Hong Kong, China)
Wladek Walukiewicz, Lawrence Berkeley National Lab. (United States)
Yoshitaka Okada, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 10099:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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