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Proceedings Paper

Mid-infrared SOI micro-ring modulator operating at 2.02 microns
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Paper Abstract

Micro-ring modulators for use in high-speed telecommunication transceivers designed for silicon-on-insulator (SOI) for 2 μm wavelength operation are described and simulated with comparison to 1.55 μm. Device simulations show improved DC modulation performance due to the free-carrier effect described in the plasma dispersion relations which is stronger for longer wavelengths. WDM applications are described and simulated. Micro-ring modulator devices were designed and fabricated at A*STAR IME and are pending measurement.

Paper Details

Date Published: 20 February 2017
PDF: 7 pages
Proc. SPIE 10108, Silicon Photonics XII, 1010814 (20 February 2017); doi: 10.1117/12.2250586
Show Author Affiliations
David E. Hagan, McMaster Univ. (Canada)
Andrew P. Knights, McMaster Univ. (Canada)
Liam G. R. Dow, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 10108:
Silicon Photonics XII
Graham T. Reed; Andrew P. Knights, Editor(s)

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