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Proceedings Paper

Solution-deposited Al2O3 dielectric towards fully-patterned thin film transistors on shape memory polymer
Author(s): Trey B. Daunis; Gerardo Gutierrez-Heredia; Ovidio Rodriguez-Lopez; Jian Wang; Walter E. Voit; Julia W. P. Hsu
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Paper Abstract

Solution deposition has potential for highly cost-effective fabrication of thin film transistors (TFTs) on flexible substrates. Shape memory polymer (SMP), with improved thermal mechanical response, may enable large-area flexible devices, as well as add control to the product shape and modulus. Until date, TFTs made on SMP substrates have been limited to vacuum-deposition methods. While TFTs processed through more economical solution-based techniques achieve device performance close to their vacuum-processed counterparts, they have not yet been demonstrated on SMP substrates due to the required high calcination temperatures (> 500 °C). To take full advantages of SMP, low temperature (< 200 °C) solution-based processing is highly desirable. Compatibility of the deposition process with the substrate and previously deposited films is essential. Here, we develop a process that incorporates direct UV patterning that would allow for fabrication of oxide TFTs on SMP using a reduced number of processing steps. Rigid In2O3 TFTs, deposited from solution-combustion synthesis, are fabricated on Si substrates with different solution-deposited dielectrics to evaluate their potential for transferring to SMP.

Paper Details

Date Published: 24 February 2017
PDF: 8 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051Z (24 February 2017); doi: 10.1117/12.2250393
Show Author Affiliations
Trey B. Daunis, The Univ. of Texas at Dallas (United States)
Gerardo Gutierrez-Heredia, The Univ. of Texas at Dallas (United States)
Ovidio Rodriguez-Lopez, The Univ. of Texas at Dallas (United States)
Jian Wang, The Univ. of Texas at Dallas (United States)
Walter E. Voit, The Univ. of Texas at Dallas (United States)
Julia W. P. Hsu, The Univ. of Texas at Dallas (United States)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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