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Proceedings Paper

Photo-induced droop in blue to red light-emitting GaInN-GaN heterostructures (Conference Presentation)
Author(s): Thi Huong Ngo; Bernard Gil; Benjamin Damilano; Aimeric Courville; Philippe De Mierry
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Paper Abstract

Despite an already existing abundant literature dedicated to report of lot of experimental investigations towards the understanting of the mechanisms that rule the limitation of intense light emission in nitride-based heterostructures, there are still some issues that are not fully elucidated. This is probably related to the lack of investigations away from the blue and aquamarine light regions. In this communication we cover the 480 nm to 620 nm range by using a series of samples with different designs: single and multiple GaInN-GaN quantum wells. This paper is limited to heterostructures grown along the polar orientation. By changing the well width, and the indium content we could tune in the one hand the Quantum Confined Stark Effect that is to say the intrinsic radiative recombination rate while we could tune the crystalline quality by using strain-compensated GaInN-GaN-AlGaN designs. Finally, by changing our optical pump density we modified the intrinsic non radiative Auger. Given an emission wavelength, we find that the photoexcitation density P for the onset of substantial Auger effect to increase with the number of wells. Using an ABC-type modelling we find a clear 3/2 power law correlation between parameters B and C. This behavior is discussed in terms of electron-hole coulomb interaction and electron-electron repulsion in photo-excited samples. In condition of efficient Auger recombination, the variation of the internal quantum efficiency with photoexcitation density is ruled by a universal power law independent of the design: IQE = IQE0 – a log10 P with a =16 %cm2/Watt.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040R (19 April 2017); doi: 10.1117/12.2250361
Show Author Affiliations
Thi Huong Ngo, Lab. Charles Coulomb (France)
Bernard Gil, Lab. Charles Coulomb (France)
Benjamin Damilano, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Aimeric Courville, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Philippe De Mierry, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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