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Proceedings Paper

Quantum-dot like localization in AlGaN nanowires (Conference Presentation)
Author(s): Matthias Belloeil; Bruno Daudin; Bruno Gayral
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Paper Abstract

AlxGa1-xN nanowires (NWs) are considered to be a promising solution for solid-state ultraviolet (UV) emission. The basic physics of ternary alloys in NWs, and in particular of AlGaN NWs is however still to be explored. Here we report on the study of the structural and optical properties of AlGaN sections grown on top of GaN NWs on Si (111) substrates by plasma-assisted molecular beam epitaxy, in particular as a function of AlGaN growth temperature and ternary alloy composition Several series of samples with AlxGa1-xN sections on top of GaN NWs were grown in N-rich conditions, at different average AlN molar fractions (x in the 0.3-0.6 range) and various growth temperatures. Microphotoluminescence of single nanowires reveals a broad spectrum made of sharp lines with linewidths in the 1-5 meV range. This is similar to what one obtains when probing in luminescence an ensemble of quantum dots. We thereafter performed photon correlation measurements in a Hanbury-Brown and Twiss set-up, which showed that indeed, antibunching is observed when probing a single line. Such a single AlGaN nanowire thus behaves as a collection of quantum dots, which we attribute to localization centers due to Ga-richer regions in the AlGaN matrix. The mere counting of the number of sharp lines observed thus allows to determine the spatial density of such localized emission centers. We will also discuss time-resolved photoluminescence on such sharp emission lines, which allows to directly probe the size homogeneity of these localization centers in the AlGaN alloy.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040W (19 April 2017); doi: 10.1117/12.2250329
Show Author Affiliations
Matthias Belloeil, Commissariat à l'Énergie Atomique (France)
Bruno Daudin, Commissariat à l'Énergie Atomique (France)
Bruno Gayral, Commissariat à l'Énergie Atomique (France)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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