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Proceedings Paper

Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers
Author(s): Dongyoung Kim; Mingchu Tang; Jiang Wu; Sabina Hatch; Yurii Maidaniuk; Vitaliy Dorogan; Yuriy I. Mazur; Gregory J. Salamo; Huiyun Liu
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Paper Abstract

In this work, the effect of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers is studied. The AlAs cap layers suppress the formation of the wetting layer during quantum dot growth. This helps achieve quantum dot state filling, which is one of the requirements for strong sub-bandgap photon absorption in the quantum dot intermediate band solar cell, at lower Si doping density. Furthermore, the passivation of defect states in the quantum dots with moderate Si doping is demonstrated, which leads to an enhancement of the carrier lifetime in the quantum dots, and hence the open-circuit voltage.

Paper Details

Date Published: 23 February 2017
PDF: 6 pages
Proc. SPIE 10099, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI, 100990H (23 February 2017); doi: 10.1117/12.2250328
Show Author Affiliations
Dongyoung Kim, Univ. College London (United Kingdom)
Mingchu Tang, Univ. College London (United Kingdom)
Jiang Wu, Univ. College London (United Kingdom)
Sabina Hatch, Univ. College London (United Kingdom)
Yurii Maidaniuk, Univ. of Arkansas (United States)
Vitaliy Dorogan, Univ. of Arkansas (United States)
Yuriy I. Mazur, Univ. of Arkansas (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)
Huiyun Liu, Univ. College London (United Kingdom)


Published in SPIE Proceedings Vol. 10099:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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