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Proceedings Paper

Second-order nonlinearities in strained silicon photonic structures (Conference Presentation)
Author(s): Pedro Damas; Xavier Le Roux; Mathias Berciano; Guillaume Marcaud; Carlos Alonso-Ramos; Daniel Benedikovic; Delphine Marris-Morini; Eric Cassan; Laurent Vivien
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Paper Abstract

Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, silicon is a centrosymmetric crystal, i.e. silicon doesn’t have Pockels effect. Nevertheless, breaking the crystal symmetry of silicon can be used to overcome this limitation. This crystal modification is achieved by depositing a SiN high-stress overlayer. In this work, we present recent developments on the subject taking into account parasitic effects including plasma dispersion effect and fixed charge effect under an electric field. We theoretically and experimentally investigated Pockels effect in silicon waveguides and last results will be presented.

Paper Details

Date Published: 28 April 2017
PDF: 1 pages
Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 101110W (28 April 2017); doi: 10.1117/12.2250301
Show Author Affiliations
Pedro Damas, Ctr. for Nanoscience and Nanotechnology (France)
Xavier Le Roux, Ctr. for Nanoscience and Nanotechnology (France)
Mathias Berciano, Ctr. for Nanoscience and Nanotechnology (France)
Guillaume Marcaud, Ctr. for Nanoscience and Nanotechnology (France)
Carlos Alonso-Ramos, Ctr. for Nanoscience and Nanotechnology (France)
Daniel Benedikovic, Ctr. for Nanoscience and Nanotechnology (France)
Delphine Marris-Morini, Ctr. de Nanosciences et de Nanotechnologies (France)
Eric Cassan, Ctr. de Nanosciences et de Nanotechnologies (France)
Laurent Vivien, Ctr. for Nanoscience and Nanotechnology (France)


Published in SPIE Proceedings Vol. 10111:
Quantum Sensing and Nano Electronics and Photonics XIV
Manijeh Razeghi, Editor(s)

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