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Proceedings Paper

Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions
Author(s): Yongkun Sin; Jeremy Bonsall; Zachary Lingley; Miles Brodie; Maribeth Mason
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Paper Abstract

High electron mobility transistors (HEMTs) based on AlGaN-GaN hetero-structures are finding an increasing number of commercial and military applications that require high voltage, high power, and high efficiency operation. In recent years, leading GaN HEMT manufacturers have reported excellent RF power characteristics and encouraging reliability, but long-term reliability in the space environment still remains a major concern due to a large number of defects and traps present both in the bulk as well as at the surface, leading to undesirable characteristics including current collapse. Furthermore, degradation mechanisms in GaN HEMTs are still not well understood. Thus, reliability and radiation effects of GaN HEMTs should be studied before solid state power amplifiers (SSPAs) based on GaN HEMT technology are successfully deployed in space satellite systems. For the present study, we investigated electrical characteristics of high-power GaN HEMTs irradiated with protons and heavy ions under various irradiation and biasing conditions.

Paper Details

Date Published: 16 February 2017
PDF: 10 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041B (16 February 2017); doi: 10.1117/12.2250250
Show Author Affiliations
Yongkun Sin, The Aerospace Corp. (United States)
Jeremy Bonsall, The Aerospace Corp. (United States)
Zachary Lingley, The Aerospace Corp. (United States)
Miles Brodie, The Aerospace Corp. (United States)
Maribeth Mason, The Aerospace Corp. (United States)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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