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Proceedings Paper

50Gb/s PAM-4 oxide VCSEL development progress at Broadcom
Author(s): Jingyi Wang; M. V. Ramana Murty; Charlie Wang; David Hui; Ann Lehman Harren; Hsu-Hao Chang; Zheng-Wen Feng; Thomas R. Fanning; Aaditya Sridhara; Sumitro-Joyo Taslim; Xinle Cai; Jason Chu; Laura M. Giovane
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Paper Abstract

This paper will review the device design and performance of Broadcom’s 50Gb/s PAM-4 VCSEL to enable the next generation of transceivers using a PAM-4 advanced modulation scheme at 25-28 GBd. The VCSEL has been optimized to minimize noise and improve dynamic performance for cleaner eyes. Preliminary wear out lifetime studies indicate that the time to 1% failure exceeds 10 years, making the VCSELs suitable for data communication applications.

Paper Details

Date Published: 25 February 2017
PDF: 6 pages
Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 1012202 (25 February 2017); doi: 10.1117/12.2250211
Show Author Affiliations
Jingyi Wang, Broadcom Ltd. (United States)
M. V. Ramana Murty, Broadcom Ltd. (United States)
Charlie Wang, Foxconn Optical Interconnect Technologies (United States)
David Hui, Foxconn Optical Interconnect Technologies (United States)
Ann Lehman Harren, Broadcom Ltd. (United States)
Hsu-Hao Chang, Broadcom Ltd. (United States)
Zheng-Wen Feng, Broadcom Ltd. (United States)
Thomas R. Fanning, Broadcom Ltd. (United States)
Aaditya Sridhara, Broadcom Ltd. (United States)
Sumitro-Joyo Taslim, Broadcom Ltd. (United States)
Xinle Cai, Broadcom Ltd. (United States)
Jason Chu, Broadcom Ltd. (United States)
Laura M. Giovane, Broadcom Ltd. (United States)


Published in SPIE Proceedings Vol. 10122:
Vertical-Cavity Surface-Emitting Lasers XXI
Kent D. Choquette; Chun Lei, Editor(s)

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